Non-Volatile Photonic Memory Based on a SAHAS Configuration

نویسندگان

چکیده

The non-volatile memory is a crucial functionality for wide range of applications in photonic integrated circuits, however, it still poses challenge silicon technology. This problem has been overcome the microelectronic industry by using SONOS (silicon-oxide-nitride-oxide-silicon) cells, which non-volatility enabled dielectric trapping layer such as nitride. Analogously, this work, similar approach nitride replaced hafnium oxide layer, named SAHAS configuration, proposed enabling programmable erasable fully compatible with platform. structure features an efficient performance writing and erasing times 100 ?s, retention over 10 years energy consumption pJ range, improve current or floating gate based approaches that exploit plasma dispersion effect silicon. device shows extinction ratio above 12 dB insertion losses below 1 compact footprint. In addition, because optically read, ultrafast access picosecond are also achieved.

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ژورنال

عنوان ژورنال: IEEE Photonics Journal

سال: 2021

ISSN: ['1943-0655', '1943-0647']

DOI: https://doi.org/10.1109/jphot.2021.3060144